Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser
- 1 June 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (6S)
- https://doi.org/10.1143/jjap.36.4216
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)IEEE Photonics Technology Letters, 1996
- Optical gain and lasing in self‐assembled InP/GaInP quantum dotsApplied Physics Letters, 1996
- Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laserSemiconductor Science and Technology, 1996
- Structural characterization of (In,Ga)As quantum dots in a GaAs matrixPhysical Review B, 1995
- Low threshold, large
T
o
injectionlaser emissionfrom (InGa)As quantum dotsElectronics Letters, 1994
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982