Discrete energy level separation and the threshold temperature dependence of quantum dot lasers
- 24 July 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (4) , 466-468
- https://doi.org/10.1063/1.127012
Abstract
Data are presented on one- and two-stack InAs quantum dot lasers that have reduced temperature sensitivity of their lasing threshold. Adjustment of dot size and composition is used to increase the energy separation between the ground and first excited radiative transition energies to 104 meV, with a dot density of ∼3.1×10 10 cm −2 . The one- and two-stack lasers show broad area as-cleaved room temperature threshold current densities as low as 43 and 35 A/cm2, respectively. The wide energy separation between the ground and first excited radiative transitions leads to significant improvements in the temperature sensitivity of threshold.Keywords
This publication has 10 references indexed in Scilit:
- Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dotsApplied Physics Letters, 2000
- Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laserApplied Physics Letters, 1999
- 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mAIEEE Photonics Technology Letters, 1999
- Optical characteristics of 1.24-μm InAs quantum-dot laser diodesIEEE Photonics Technology Letters, 1999
- Extremely low room-temperature threshold currentdensity diode lasersusing InAs dots in In 0.15 Ga 0.85 As quantum wellElectronics Letters, 1999
- 1.3 µm GaAs-based laser using quantum dotsobtained byactivated spinodal decompositionElectronics Letters, 1999
- Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasersIEEE Photonics Technology Letters, 1999
- 1.3 μm room-temperature GaAs-based quantum-dot laserApplied Physics Letters, 1998
- Temperature dependence of the threshold current density of a quantum dot laserIEEE Journal of Quantum Electronics, 1998
- Low threshold, large
T
o
injectionlaser emissionfrom (InGa)As quantum dotsElectronics Letters, 1994