1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
- 1 October 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 11 (10) , 1205-1207
- https://doi.org/10.1109/68.789692
Abstract
We demonstrate the first 1.3-μm continuous-wave (CW) lasing at room temperature of self-assembled InGaAs-GaAs quantum dots. High-density 1.3-μm emission dots were successfully formed by the combination of low-rate growth and InGaAs-layer overgrowth methods of molecular beam epitaxy. The 1.3-μm ground-level CW lasing occurred at up to 40/spl deg/C, and the threshold current of 8 mA at 25/spl deg/C is less than one thirtieth of values ever reported for 1.3-μm dot pulse lasers. The achievement represents a milestone for creating quantum-dot lasers applicable to fiber-optic communication system.Keywords
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