1.3 µm GaAs-based laser using quantum dotsobtained byactivated spinodal decomposition
- 27 May 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (11) , 898-900
- https://doi.org/10.1049/el:19990596
Abstract
Low threshold current density (Jth = 65 A/cm2) operation near 1.3 µm at room temperature (RT) is realised for lasers using InAs/InGaAs/GaAs quantum dots (QDs). The lasing occurs via the QD ground state for cavity length L > 1 mm. The differential efficiency is 40% and internal losses are 1.5 cm–1. The characteristic temperature near RT is 160 K.Keywords
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