Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier

27 April 1998

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 72 (17) , 2090-2092
https://doi.org/10.1063/1.121285

Abstract

The slope efficiency and threshold current density of 1.3 μm AlGaInAs/InP lasers with AlInAs–AlGaInAs multiquantum barrier (MQB) are experimentally studied and compared with the conventional step-index separate confinement heterostructure (SCH) laser. With the MQBs at the guiding layers, the characteristic temperature can be improved as much as 10 K as compared with the conventional SCH laser. This is attributed to the suppression of electron and hole leakage currents.

Keywords

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