Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
- 1 August 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 11 (8) , 931-933
- https://doi.org/10.1109/68.775303
Abstract
The optical characteristics of the first laser diodes fabricated from a single-InAs quantum-dot layer placed inside a strained InGaAs QW are described. The saturated modal gain for this novel laser active region is found to be 9-10 cm/sup -1/ in the ground state. Room temperature threshold current densities as low as 83 A/cm/sup 2/ for uncoated 1.24-/spl mu/m devices are measured, and operating wavelengths over a 190-nm span are demonstrated.Keywords
This publication has 11 references indexed in Scilit:
- Thermal effects in quantum dot lasersJournal of Applied Physics, 1999
- 1.3 μm room-temperature GaAs-based quantum-dot laserApplied Physics Letters, 1998
- Lasing with low threshold current and high outputpower fromcolumnar-shaped InAs/GaAs quantum dotsElectronics Letters, 1998
- Edge and vertical cavity surface emitting InAs quantum dot lasersSolid-State Electronics, 1998
- High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laserJournal of Applied Physics, 1998
- Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor depositionApplied Physics Letters, 1997
- Self-assembling InP quantum dots for red lasersJournal of Crystal Growth, 1997
- InGaAs-GaAs quantum-dot lasersIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Room temperature lasing from InGaAs quantum dotsElectronics Letters, 1996
- Prevention of gain saturation by multi-layer quantumdot lasersElectronics Letters, 1996