Hydrolyzation oxidation of AlxGa1−xAs-AlAs-GaAs quantum well heterostructures and superlattices
- 24 December 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (26) , 2844-2846
- https://doi.org/10.1063/1.103759
Abstract
Data are presented on the conversion (selective conversion) of high‐composition (AlAs)x(GaAs)1−x layers, e.g., in AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices (SLs), into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400 °C). Hydrolyzation oxidation of a fine‐scale AlAs(LB)‐GaAs(Lz) SL (LB +Lz≲100 Å), or random alloy AlxGa1−xAs (x≳0.7), is observed to proceed more slowly and uniformly than a coarse‐scale ‘‘alloy’’ such as an AlAs‐GaAs superlattice with LB + Lz≳200 Å.Keywords
This publication has 7 references indexed in Scilit:
- Environmental degradation of AlxGa1−xAs-GaAs quantum-well heterostructuresJournal of Applied Physics, 1990
- Stability of AlAs in AlxGa1−xAs-AlAs-GaAs quantum well heterostructuresApplied Physics Letters, 1990
- Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructuresJournal of Applied Physics, 1988
- Metalorganic chemical vapor deposition of III-V semiconductorsJournal of Applied Physics, 1985
- IR-red GaAs-AlAs superlattice laser monolithically integrated in a yellow-gap cavityApplied Physics Letters, 1981
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981
- Surface Protection and Selective Masking during Diffusion in SiliconJournal of the Electrochemical Society, 1957