Temperature dependence of gain saturation in multilevel quantum dot lasers
- 1 September 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 36 (9) , 1065-1071
- https://doi.org/10.1109/3.863959
Abstract
The temperature dependence of quantum dot (QD) optical gain is analyzed using a multilevel model and compared with experiment. The maximum gain is found to have a surprisingly strong temperature dependence that causes level switching and can limit laser performance in QD lasers. The model based on multiple discrete levels elucidates general design criteria that should be satisfied to obtain a stable threshold versus temperature in QD lasers. Good agreement is obtained between calculations and experiment for level switching in 1.3-/spl mu/m QD lasers.Keywords
This publication has 18 references indexed in Scilit:
- Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μmJournal of Applied Physics, 1999
- Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasersIEEE Journal of Quantum Electronics, 1999
- Collisional broadening and shift of spectral lines in quantum dot lasersApplied Physics Letters, 1999
- Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 µm) GaAs-based quantum dot lasersJournal of Electronic Materials, 1999
- 1.3 μm room-temperature GaAs-based quantum-dot laserApplied Physics Letters, 1998
- Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band studyPhysical Review B, 1997
- Negative Characteristic Temperature of InGaAs Quantum Dot Injection LaserJapanese Journal of Applied Physics, 1997
- Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laserSemiconductor Science and Technology, 1996
- 1.3 μm photoluminescence from InGaAs quantum dots on GaAsApplied Physics Letters, 1995
- Self-Formed In0.5Ga0.5As Quantum Dots on GaAs Substrates Emitting at 1.3 µmJapanese Journal of Applied Physics, 1994