Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 µm) GaAs-based quantum dot lasers
- 1 May 1999
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 28 (5) , 532-536
- https://doi.org/10.1007/s11664-999-0107-x
Abstract
No abstract availableKeywords
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- Self-Formed In0.5Ga0.5As Quantum Dots on GaAs Substrates Emitting at 1.3 µmJapanese Journal of Applied Physics, 1994