Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm
- 17 November 1999
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 86 (11) , 6135-6138
- https://doi.org/10.1063/1.371664
Abstract
Quantum dots were grown by molecular beam epitaxy on GaAs substrates using a cycled submonolayer InAs/GaAs deposition technique. Their structural and luminescence characteristics have been compared with conventional self-organized dots. The room-temperature luminescence spectra are characterized by a ground state transition at 1.3 μm and additional transitions corresponding to excited states. Cross-sectional transmission electron microscopy indicates that no dislocations are formed if the total InAs thickness is less than 5–6 monolayers. Temperature dependence of the photoluminescence indicates that both types of quantum dots may have nonradiative defects, caused by segregation and related phenomena.This publication has 13 references indexed in Scilit:
- InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μmApplied Physics Letters, 1999
- A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substratesApplied Physics Letters, 1999
- 1.3 μm room-temperature GaAs-based quantum-dot laserApplied Physics Letters, 1998
- Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dotsApplied Physics Letters, 1998
- GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxyApplied Physics Letters, 1998
- Quantum dot resonant cavity photodiode with operationnear 1.3 µm wavelengthElectronics Letters, 1997
- GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature PerformanceJapanese Journal of Applied Physics, 1996
- 1.3 μm photoluminescence from InGaAs quantum dots on GaAsApplied Physics Letters, 1995
- Self-Formed In0.5Ga0.5As Quantum Dots on GaAs Substrates Emitting at 1.3 µmJapanese Journal of Applied Physics, 1994
- Long-wavelength (1.3 μm) luminescence in InGaAs strained quantum-well structures grown on GaAsApplied Physics Letters, 1991