Infrared Cathodoluminescence Studies from Dislocations in Silicon in tem, a Fourier Transform Spectrometer for Cl in Tem and Els/cl Coincidence Measurements of Lifetimes in Semiconductors
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Forbidden-reflection lattice imaging for the determination of kink densities on partial dislocationsPhilosophical Magazine A, 1986
- Dislocation-related photoluminescence in siliconApplied Physics A, 1985
- Line defects in silicon: The 90° partial dislocationPhysical Review B, 1984
- Cathodoluminescence and polarization studies from individual dislocations in diamondPhilosophical Magazine Part B, 1984
- Dependence of Photoluminescence on Temperature in Dislocated Silicon CrystalsPhysica Status Solidi (a), 1983
- Recombination at dislocations in siliconPhysica Status Solidi (a), 1983
- Investigation of the electronic effects of dislocations by stemUltramicroscopy, 1981
- Modification of the dislocation luminescence spectrum by oxygen atmospheres in siliconPhysica Status Solidi (a), 1981
- Observation of cathodoluminescence at single dislocations by STEMPhilosophical Magazine A, 1980
- On the mobility of partial dislocations in siliconPhilosophical Magazine, 1977