Recombination at dislocations in silicon
- 16 January 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 75 (1) , 255-262
- https://doi.org/10.1002/pssa.2210750129
Abstract
No abstract availableKeywords
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- Recombination of charge carriers at dislocations in germaniumPhysica Status Solidi (a), 1973
- The electrical properties of dislocations in silicon—ISolid-State Electronics, 1969