Eigenschaften der Energieniveaus von Versetzungen in Silizium
- 16 May 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 65 (1) , 389-401
- https://doi.org/10.1002/pssa.2210650145
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Two-step photoconductivity by dislocations in siliconPhysica Status Solidi (a), 1977
- Investigation of the energy spectrum and kinetic phenomena in dislocated Si crystals (I)Physica Status Solidi (a), 1977
- Optical excitation of dislocation states in germanium. I. ExperimentsPhysica Status Solidi (a), 1977
- On the electronic states at dislocations in germaniumPhysica Status Solidi (a), 1972
- The Position of the Dislocation Acceptor Level in n‐Type GePhysica Status Solidi (b), 1968
- Die elektrischen Eigenschaften von Versetzungen in GermaniumPhysica Status Solidi (b), 1967
- Trapping Processes at Dislocations in Plastically Bent GermaniumPhysica Status Solidi (b), 1966
- The electrical properties of dislocations in semiconductorsAdvances in Physics, 1963
- Anisotropic Mobilities in Plastically Deformed GermaniumJournal of Applied Physics, 1959
- Some Predicted Effects of Temperature Gradients on Diffusion in CrystalsPhysical Review B, 1953