Median penetration depths and implantation profiles for low energy positrons in Al
- 3 June 1991
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 3 (22) , 4109-4114
- https://doi.org/10.1088/0953-8984/3/22/021
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Monte Carlo simulation of kilovolt electron transport in solidsJournal of Applied Physics, 1990
- Defect profiling of semiconductor epilayers using positron beamsCanadian Journal of Physics, 1989
- Interaction of low-energy electrons with condensed matter: stopping powers and inelastic mean free paths from optical dataJournal of Electron Spectroscopy and Related Phenomena, 1988
- Comparison of electron attenuation lengths and escape depths with inelastic mean free pathsSurface and Interface Analysis, 1988
- Electron mean-free-path calculations using a model dielectric functionPhysical Review B, 1987
- Monte Carlo calculations of keV electron and positron slowing down in solids. IIApplied Physics A, 1984
- Direct Monte Carlo simulation of scattering processes of kV electrons in aluminum; comparison of theoretical N(E) spectra with experimentSurface Science, 1983
- Transmission of 1 - 6-keV positrons through thin metal filmsPhysical Review A, 1982
- Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solidsSurface and Interface Analysis, 1979
- Electron slowing-down spectra in aluminum metalPhysical Review B, 1977