Electron-electron interaction and intersubband absorption coefficient in a GaAs/As quantum well
- 15 November 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (20) , 13351-13356
- https://doi.org/10.1103/physrevb.46.13351
Abstract
The full random-phase approximation (RPA) spectral function is calculated for an electron gas confined in a modulation-doped GaAs/ As quantum well. In the first subband we observe the typical structure of the two-dimensional plasmaron. The renormalization of the chemical potential is smaller than that of the edge of the density of states. In the second subband the single-state broadening and the band renormalization are found to be smaller than in the first subband. When the depolarization effect is neglected, the intersubband absorption line is narrower than the inhomogeneous broadening due to the different effective masses in the two subbands for the noninteracting electron system. This result is explained by the two-dimensional plasmaron structure in the first subband. The theoretical peak is narrower than the experimental one. If in the spectral function the self-energy is taken at the energy of the noninteracting electron, the corresponding absorption line is broader than the experimental one. If the depolarization effect is included, the approximate linewidth is found to be narrower and the full RPA linewidth broader than the experimental one.
Keywords
This publication has 16 references indexed in Scilit:
- Intersubband absorption in GaAs/AlGaAs quantum wells between 4.2K and room temperatureSuperlattices and Microstructures, 1989
- Inter-sub-band absorption in GaAs/AlGaAs quantum wells between 4.2 K and room temperatureSemiconductor Science and Technology, 1988
- Intersubband resonances and plasmons in quasi-two-dimensional systems: A line-shape and coupling analysisPhysical Review B, 1988
- New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- Subband resonance of electrons on Si(110)Physical Review B, 1984
- Light Scattering by Photoexcited Two-Dimensional Electron Plasma in GaAs-(AlGa) As HeterostructuresPhysical Review Letters, 1981
- Gain Spectrum of an e–h Liquid in Direct Gap SemiconductorsPhysica Status Solidi (b), 1980
- Electronic Properties of a Semiconductor Superlattice. I. Self-Consistent Calculation of Subband Structure and Optical SpectraJournal of the Physics Society Japan, 1979
- Many-body effects in-type Si inversion layers. II. Excitations to higher subbandsPhysical Review B, 1977