Intersubband absorption in GaAs/AlGaAs quantum wells between 4.2K and room temperature
- 31 December 1989
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 5 (2) , 259-263
- https://doi.org/10.1016/0749-6036(89)90296-6
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987
- Observation of Stark shifts in quantum well intersubband transitionsApplied Physics Letters, 1987
- Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguidesApplied Physics Letters, 1987
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- Parallel excitation of hole and electron intersubband resonances in space-charge layers on siliconPhysical Review B, 1984
- Intersubband spectroscopy and valley degeneracy of Si(110) and Si(111)-type inversion layersPhysical Review B, 1984
- Spectroscopy of the electron subbands on (1 1 1)-SiSolid State Communications, 1984
- Theoretical investigations of superlattice band structure in the envelope-function approximationPhysical Review B, 1982
- Explicit local exchange-correlation potentialsJournal of Physics C: Solid State Physics, 1971
- The temperature dependence of the band-edge effective masses of InSb, InAs and GaAs as deduced from magnetophonon magnetoresistance measurementsJournal of Physics C: Solid State Physics, 1970