On the relation between dopant anomalous diffusion in Si and end-of-range defects
- 1 March 1995
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 96 (1-2) , 202-209
- https://doi.org/10.1016/0168-583x(94)00483-8
Abstract
No abstract availableKeywords
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