Optimization of the Amorphous Layer Thickness and the Junction Depth in the Preamorphization Method for Shallow-Junction Formation

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Abstract
A 0.1- µm-deep p+/n junction was formed by the Si+ preamorphization method. The thickness of the preamorphized layer and the junction depth were optimized systematically. It was found that the junction must be formed at a depth 70–90 nm greater than that of the amorphous/crystal (a/c) interface to reduce leakage current density J 1 to less than 1×10-8 A/cm2. Furthermore it was confirmed that the preamorphized layer thickness influences the dependence of J 1 on the distance between the junction and a/c interface and that a thinner preamorphized layer forms a thinner or lower-defect-density residual defect layer.