Direct extraction of semiconductor device parameters using lateral optimization method
- 1 April 1999
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 43 (4) , 845-848
- https://doi.org/10.1016/s0038-1101(99)00044-1
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Eliminating parasitic resistances in parameter extraction of semiconductor device modelsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Simple parameter extraction method for non-idealSchottkybarrier diodesElectronics Letters, 1998
- Generalized approach to the parameter extraction fromI-Vcharacteristics of Schottky diodesSemiconductor Science and Technology, 1996
- Parasitic series resistance-independent method for device-model parameter extractionIEE Proceedings - Circuits, Devices and Systems, 1996
- Analysis of nonideal Schottky and p-n junction diodes—Extraction of parameters from I–V plotsJournal of Applied Physics, 1995
- A generalized model for a two-terminal device and its applications to parameter extractionSolid-State Electronics, 1995
- Schottky diodes with high series resistance: Limitations of forward I-V methodsJournal of Applied Physics, 1994
- Extraction of Schottky diode (and p−n junction) parameters from I–V characteristicsSolid-State Electronics, 1993
- Schottky barrier and pn-junctionI/V plots ? Small signal evaluationApplied Physics A, 1988
- A modified forward I-V plot for Schottky diodes with high series resistanceJournal of Applied Physics, 1979