Auger decay of X-point excitons in a type II GaAs/AlGaAs superlattice
- 31 December 1988
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 4 (2) , 227-232
- https://doi.org/10.1016/0749-6036(88)90040-7
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Origin of the band-edge states in [001] thin superlattices of GaAs/AlAsApplied Physics Letters, 1987
- Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlatticesPhysical Review B, 1987
- Exciton binding energy in type-II GaAs-(Al,Ga)As quantum-well heterostructuresPhysical Review B, 1987
- Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-Al_{x}Ga_{1-x}As superlattices and multiple-quantum-well structuresPhysical Review B, 1987
- X-point excitons in AlAs/GaAs superlatticesApplied Physics Letters, 1986
- Optical evidence of staggered band alignments in (Al,Ga)As/AlAs multi-quantum-well structuresJournal of Vacuum Science & Technology B, 1986
- Pressure dependence of GaAs/AlxGa1−xAs quantum-well bound states: The determination of valence-band offsetsJournal of Vacuum Science & Technology B, 1986
- Staggered band alignments in AlGaAs heterojunctions and the determination of valence-band offsetsApplied Physics Letters, 1986
- Diamond anvil cell and high-pressure physical investigationsReviews of Modern Physics, 1983