Electron beam annealing for phosphorous and arsenic implantation
- 1 January 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 6 (1-2) , 321-324
- https://doi.org/10.1016/0168-583x(85)90652-4
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Ellipsometric study of annealing processes of phosphorus-ion-implanted layers of SiApplied Physics Letters, 1980
- Scanning-electron-beam annealing of arsenic-implanted siliconApplied Physics Letters, 1979