GaAs/AlGaAs distributed feedback transverse junction stripe laser grown by molecular beam epitaxy
- 8 June 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (23) , 1622-1624
- https://doi.org/10.1063/1.97747
Abstract
GaAs/AlGaAs transverse junction stripe lasers with a distributed feedback structure were fabricated. The cw threshold current was 27 mA at 20 °C. The laser operated in a pure single longitudinal mode at the wavelength of 867 nm.Keywords
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