Pulsed Laser Deposition of Thin Silicon Nitride Films
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Silicon nitride films deposited from SiH2Cl2NH3 by low pressure chemical vapor deposition: kinetics, thermodynamics, composition and structurePublished by Elsevier ,2002
- Room-temperature growth of AlN thin films by laser ablationApplied Physics Letters, 1992
- Silicon nitride formation from a silane–nitrogen electron cyclotron resonance plasmaJournal of Vacuum Science & Technology A, 1991
- Stability of electrical properties of nitrogen-rich, silicon-rich, and stoichiometric silicon nitride filmsJournal of Applied Physics, 1989
- Plasma-enhanced chemical vapor deposition SiN films: Some electrical propertiesJournal of Vacuum Science & Technology A, 1987
- Characteristics of Thermal Silicon Nitride Films Grown in Argon‐Diluted AmmoniaJournal of the Electrochemical Society, 1987
- Electronic structure of silicon nitride and amorphous silicon/silicon nitride band offsets by electron spectroscopyJournal of Applied Physics, 1987
- Characterization of plasma-deposited silicon nitride filmsJournal of Applied Physics, 1980
- Very Thin Silicon Nitride Films Grown by Direct Thermal Reaction with NitrogenJournal of the Electrochemical Society, 1978
- Characterization of Silicon Nitride FilmsJournal of the Electrochemical Society, 1971