A High-Current Oxygen Ion Source

1 January 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 32 (5) , 1751-1753
https://doi.org/10.1109/tns.1985.4333711

Abstract

Production of buried oxide layers in silicon by ion implantation requires very high currents of atomic oxygen ions for an acceptable production rate of implanted wafers. A high-current dc ion source developed at Chalk River has been adapted for this application. Total beam current from the source was 230 mA at 52 keV with a 9.5 A arc. Based on the 60% O+ fraction, measured on a source with only three of a possible seven apertures open, up to 138 mA of O+ are available for implantation. Oxygen consumption ranges from 2-3 scc/min (3.4-5.1 Pa·L/s) at typical operating conditions, and filament lifetime from 10 to 15 hours. This paper describes the source and its performance. The source is presently in use on a commercial prototype high current oxygen implanter.

Keywords

This publication has 3 references indexed in Scilit:

High Current DC Ion Beams
IEEE Transactions on Nuclear Science, 1983
A high-speed buried channel MOSFET isolated by an implanted silicon dioxide layer
IEEE Transactions on Electron Devices, 1981
C.M.O.S. devices fabricated on buried SiO ² layers formed by oxygen implantation into silicon
Electronics Letters, 1978