60GHz-Pulse Detector Based on CMOS Nonlinear Amplifier
- 1 January 2009
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A low-power over-Gbps wireless pulse communication is realized at the 60 GHz band. To detect 60 GHz pulses in a receiver, a single-ended MESFET detector or a diode was conventionally used. However, the MESFET detector cannot be integrated on the silicon substrate with the CMOS building blocks of the receiver and a diode is unavailable in general design rules. To overcome this issue, a common-source amplifier, utilizing a square-law relationship between the drain current Id and the gate voltage V2 of an NMOSFET, is proposed as a detector. A nonlinear amplifier (NLA) using a standard 90 nm CMOS process is designed and fabricated. It has a voltage responsivity of 1110 mV/mW and power dissipation of 840 muW. The results show that, using the proposed NLA, it is possible to design low-cost, over-Gbps, low-power fully CMOS-compatible and compact 60 GHz receiver systems.Keywords
This publication has 4 references indexed in Scilit:
- 19.2mW 2Gbps CMOS pulse receiver for 60GHz band wireless communicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Characterization and Modeling of Metal/Double-Insulator/Metal Diodes for Millimeter Wave Wireless Receiver Applications2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2007
- Schottky barrier diodes for millimeter wave detection in a foundry CMOS processIEEE Electron Device Letters, 2005
- A 500Mbps 60GHz-Band Transceiver for IEEE 1394 Wireless Home NetworksPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2000