Thickness limitations of SiO/sub 2/ gate dielectrics for MOS ULSI
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (8) , 1884-1892
- https://doi.org/10.1109/16.57140
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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