High-resistivity GaAs grown by high-temperature molecular-beam epitaxy

This publication has 4 references indexed in Scilit:

• 1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As)
  IEEE Electron Device Letters, 1991
• Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy
  Applied Physics Letters, 1990
• Thermoelectric effect spectroscopy of deep levels—application to semi-insulating GaAs
  Applied Physics Letters, 1990
• New MBE buffer used to eliminate backgating in GaAs MESFETs
  IEEE Electron Device Letters, 1988