Thermoelectric effect spectroscopy of deep levels—application to semi-insulating GaAs
- 25 June 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (26) , 2636-2638
- https://doi.org/10.1063/1.102860
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Persistent photocurrents in semi-insulating gallium arsenideRadiation Effects and Defects in Solids, 1989
- Persistent photocurrent in semi-insulating GaAs and its relationship to the deep donor EL2Solid State Communications, 1989
- Optically enhanced photoconductivity in semi-insulating gallium arsenideApplied Physics Letters, 1989
- Native defects in gallium arsenideJournal of Applied Physics, 1988
- Transient photoconductivity measurements in semi-insulating GaAs. I. An analog approachJournal of Applied Physics, 1987
- Optical characterization of semi-insulating GaAs: Determination of the Fermi energy, the concentration of the midgap EL2 level and its occupancyApplied Physics Letters, 1987
- Optically induced long-lifetime photoconductivity in semi-insulating bulk GaAsPhysical Review B, 1987
- Insights into Metastable Defects in Semi-Insulating GaAs from Electronic Raman Studies of Nonequilibrium HolesPhysical Review Letters, 1986