Native defects in gallium arsenide
- 1 November 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (9) , R65-R92
- https://doi.org/10.1063/1.341206
Abstract
No abstract availableThis publication has 114 references indexed in Scilit:
- Deep states in GaAs LEC crystalsSolid-State Electronics, 1986
- Low dislocation, semi-insulating In-doped GaAs crystalsJournal of Crystal Growth, 1984
- Evidence for associated deep donor-shallow acceptor pair recombination for the EL2 emission band in GaAsPhysica B+C, 1983
- AsGa antisite defects in GaAsPhysica B+C, 1983
- Anisotropic defect introduction in n and p-GaAs by electron irradiationPhysica B+C, 1983
- Photoluminescence and photoluminescence excitation spectroscopy of the EL2 emission band in GaAsJournal of Applied Physics, 1983
- Photoluminescence as a diagnostic of semiconductorsProgress in Crystal Growth and Characterization, 1982
- Properties of vacancy defects in GaAs single crystalsJournal of Applied Physics, 1975
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968
- Annealing and Arsenic Overpressure Experiments on Defects in Gallium ArsenideJournal of Applied Physics, 1966