Anisotropic defect introduction in n and p-GaAs by electron irradiation
- 1 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3) , 388-393
- https://doi.org/10.1016/0378-4363(83)90278-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Anisotropic-Defect Production in Compound Semiconductors by Electron IrradiationPhysical Review Letters, 1982
- Anisotropic-Defect Introduction in GaAs by Electron IrradiationPhysical Review Letters, 1981
- Identification of the defect state associated with a gallium vacancy in GaAs andPhysical Review B, 1977
- EPR Observation of Close Frenkel Pairs in Irradiated ZnSePhysical Review Letters, 1974
- Orientation Dependence of Electron Radiation Damage in InSbPhysical Review B, 1964
- Effect of Crystal Perfection and Polarity on Absorption Edges Seen in Bragg DiffractionJournal of Applied Physics, 1962