A study of the electronic properties of cleaved InP surfaces induced by oxygen exposure
- 15 January 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (2) , 485-487
- https://doi.org/10.1063/1.336657
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Propriétés des surfaces de GaAs (110) clivées induites par l'oxygéne et la température — contribution aux caractéristiques des diodes SchottkyRevue de Physique Appliquée, 1984
- Interaction of metals with semiconductor surfacesApplications of Surface Science, 1982
- Surface donors and acceptors on GaAs and InP exposed to oxygenJournal of Vacuum Science and Technology, 1982
- Surface defect effects on Schottky barriersJournal of Vacuum Science and Technology, 1981
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979
- The surface electronic structure of 3–5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers)Surface Science, 1979