Surface accumulation of Te atoms in laser melted Te-implanted silicon

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Abstract
The fraction of Te atoms accumulated on the surface after pulsed laser melting of ion‐implanted silicon depends on the implantation range. The experimental profiles can be fitted by a numerical calculation, taking into account the diffusion in the liquid phase, the interface velocity, and the interfacial distribution coefficient which is much higher than the equilibrium one. The comparison between the spatial extent of the initial transient, well‐known from the standard theory of normal freezing, and the implantation range determines the fraction of surface accumulation.