Lattice location of Te in laser-annealed Te-implanted silicon
- 1 April 1978
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (4) , 2569-2571
- https://doi.org/10.1063/1.325068
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Visible interference effects in silicon caused by high-current–high-dose implantationApplied Physics Letters, 1976
- Etude des solutions solides “CeLnO3” et des perovskites CeLnO3 et
Pr LnO e ́ le ́ ment lanthanidiqueJournal of Solid State Chemistry, 1976 - Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976
- Ion-implanted semiconductor devicesProceedings of the IEEE, 1974
- Lattice location and dopant behavior of group II and VI elements implanted in siliconRadiation Effects, 1971