Visible interference effects in silicon caused by high-current–high-dose implantation
- 15 November 1976
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (10) , 648-651
- https://doi.org/10.1063/1.88887
Abstract
Silicon samples with visible color bands have been produced by high beam currents and have been studied using optical reflectivity, Rutherford backscattering (channeling), and transmission electron microscopy. Backscattering shows crystalline or near‐crystalline layers at the surface, buried amorphous layers centered at the damage range, and a deeper damage peak. Complex interference spectra are successfully analyzed for two sets of fringes: a visible set primarily associated with the crystalline layer of index of refraction nx at the surface and an infrared set primarily associated with the buried amorphous layer (na≳nx). Interband transitions in the ultraviolet confirm the existence of crystalline layers at the surface. The deeper damage peak is composed of small dislocations as shown by electron microscopy.Keywords
This publication has 8 references indexed in Scilit:
- Disorder produced by high-dose implantation in SiApplied Physics Letters, 1976
- Direct comparison of ion−damage gettering and phosphorus−diffusion gettering of Au in SiJournal of Applied Physics, 1975
- Secondary defects in phosphorus-implanted siliconApplied Physics Letters, 1973
- Stopping power of energetic helium ions transmitted through thin silicon crystals in channelling and random directionsRadiation Effects, 1972
- Optical properties of non-crystalline Si, SiO, SiOx and SiO2Journal of Physics and Chemistry of Solids, 1971
- ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICONApplied Physics Letters, 1970
- Optical Constants of Silicon in the Region 1 to 10 evPhysical Review B, 1960
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955