Fabrication of GaN field emitter arrays by selective area growth technique
- 1 March 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (2) , 833-835
- https://doi.org/10.1116/1.590220
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Graded electron affinity electron sourceJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Electron cyclotron resonance etching characteristics of GaN in SiCl4/ArApplied Physics Letters, 1996
- Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1995
- Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxyJournal of Crystal Growth, 1994