On the origins of structural defects in BF 2+-implanted and rapid-thermally-annealed silicon: Conditions for defect-free regrowth
- 1 March 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 7-8, 337-341
- https://doi.org/10.1016/0168-583x(85)90577-4
Abstract
No abstract availableKeywords
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