Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100−xBix at high pressure
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 1019-1021
- https://doi.org/10.1016/0022-3093(83)90340-x
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Structural changes induced by Bi doping in n-type amorphous (GeSe3.5) 100−xBixJournal of Non-Crystalline Solids, 1983
- Topology of covalent non-crystalline solids II: Medium-range order in chalcogenide alloys and ASi(Ge)Journal of Non-Crystalline Solids, 1981
- High pressure clamp for electrical measurements up to 8 GPa and temperature down to 77 KReview of Scientific Instruments, 1980