Lateral seeding epitaxy by cw Ar laser irradiation and by high temperature chemical vapor deposition technique
- 1 September 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (9) , 6387-6390
- https://doi.org/10.1063/1.331510
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulatorsApplied Physics Letters, 1981
- Seeded and limited seeding regrowth of Si over SiO2 by cw laser annealingApplied Physics Letters, 1981
- The Nucleation of CVD Silicon on SiO2 and Si3 N 4 Substrates: II . The SystemJournal of the Electrochemical Society, 1980
- The Nucleation of CVD Silicon on SiO[sub 2] and Si[sub 3]N[sub 4] SubstratesJournal of the Electrochemical Society, 1980
- Crystallographic orientation of silicon on an amorphous substrate using an artificial surface-relief grating and laser crystallizationApplied Physics Letters, 1979
- cw laser recrystallization of 〈100〉 Si on amorphous substratesApplied Physics Letters, 1979