Monolithic integration of a quantum-well laser and an optical amplifier using an asymmetric twin-waveguide structure
- 1 August 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 10 (8) , 1088-1090
- https://doi.org/10.1109/68.701511
Abstract
We demonstrate the monolithic integration of a 1.55 /spl mu/m wavelength InGaAsP-InP multiple-quantum-well (MQW) laser and a traveling-wave optical amplifier using an asymmetric, vertical twin-waveguide structure. The laser and amplifier share the same strained InGaAsP MQW active layer grown by gas-source molecular beam epitaxy, while the underlying passive waveguide layer is used for on-chip optical interconnections between the active devices. The asymmetric twin-waveguide structure uses the difference in modal gains to discriminate between the even and odd modes.Keywords
This publication has 7 references indexed in Scilit:
- Monolithic integration of an InGaAsP-InP MQW laser/waveguide using a twin-guide structure with a mode selection layerIEEE Photonics Technology Letters, 1997
- Viewing-angle properties of electrically induced hybrid twisted nematic liquid crystal display devicesPublished by SPIE-Intl Soc Optical Eng ,1996
- 2×2 InGaAsP/InP laser amplifier gate switcharrays using reactive ion etchingElectronics Letters, 1996
- Insertion-loss-free 2×2 InGaAsP/InP opticalswitch fabricatedusing bandgap energy controlled selective MOVPEElectronics Letters, 1995
- Taper-waveguide integration for polarisation insensitiveInP/InGaAsP based optical amplifiersElectronics Letters, 1994
- 1.55 μm multiquantum well semiconductor optical amplifier with low gain ripple and high coupling efficiency for photonic circuit integrationElectronics Letters, 1993
- Integrated twin-guide AlGaAs laser with multiheterostructureIEEE Journal of Quantum Electronics, 1975