2×2 InGaAsP/InP laser amplifier gate switcharrays using reactive ion etching
- 4 January 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (1) , 39-40
- https://doi.org/10.1049/el:19960054
Abstract
Waveguide integrated 2×2 InGaAsP laser amplifier gate switch arrays were fabricated using MOVPE and RIE. For the first time, RIE was applied as an etching process for the butt-coupling of the amplifier and the waveguide. A very low fibre-to-fibre loss of 1.2 dB was obtained, and the on/off extinction ratio exceeded 42 dB.Keywords
This publication has 3 references indexed in Scilit:
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