Characterization and modeling of the n- and p-channel MOSFETs inversion-layer mobility in the range 25–125°C
- 31 January 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (1) , 97-103
- https://doi.org/10.1016/0038-1101(94)90111-2
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
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