Gain spectroscopy on InGaN/GaN quantum well diodes
- 12 May 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (19) , 2580-2582
- https://doi.org/10.1063/1.118925
Abstract
We have investigated spectroscopically the emergence of gain in InGaN/GaN quantum well diodes under high current injection The spectral characteristics suggest that the electronic states responsible for blue laser action in this material are strongly influenced by the presence of microscopic crystalline disorder.
Keywords
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