MBE growth of Eu- or Tb-doped GaN and its optical properties
- 1 April 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 237-239, 1027-1031
- https://doi.org/10.1016/s0022-0248(01)02121-2
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Voltage-controlled yellow or orange emission from GaN codoped with Er and EuApplied Physics Letters, 2000
- Growth of Eu Doped GaN and Electroluminescence from MIS StructurePhysica Status Solidi (a), 1999
- Emission Quantum Efficiency of Undoped and Eu Doped GaN Determined by Photocalorimetric SpectroscopyPhysica Status Solidi (b), 1999
- Blue emission from Tm-doped GaN electroluminescent devicesApplied Physics Letters, 1999
- Visible cathodoluminescence of GaN doped with Dy, Er, and TmApplied Physics Letters, 1999
- Er doping of GaN during growth by metalorganic molecular beam epitaxyApplied Physics Letters, 1998
- Extended x-ray absorption fine structure—its strengths and limitations as a structural toolReviews of Modern Physics, 1981
- Radiative and Multiphonon Relaxation of Rare-Earth Ions inPhysical Review B, 1968
- Intensities of Crystal Spectra of Rare-Earth IonsThe Journal of Chemical Physics, 1962
- Optical Absorption Intensities of Rare-Earth IonsPhysical Review B, 1962