Strain relaxation of graded SiGe buffers grown at very high rates
- 27 January 2000
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 71 (1-3) , 20-23
- https://doi.org/10.1016/s0921-5107(99)00343-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Epitaxial growth at high rates with LEPECVDThin Solid Films, 1998
- Silicon epitaxy by low-energy plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1998
- Strain relaxation in high electron mobility Si1−xGex/Si structuresJournal of Applied Physics, 1997
- Low-temperature silicon homoepitaxy by ultrahigh vacuum electron cyclotron resonance chemical vapor depositionApplied Physics Letters, 1994
- Anomalous strain relaxation in SiGe thin films and superlatticesPhysical Review Letters, 1991
- Cooperative growth phenomena in silicon/germanium low-temperature epitaxyApplied Physics Letters, 1988