Ka-band 2-watt power GaAs MMIC
- 13 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1105-1108 vol.3
- https://doi.org/10.1109/mwsym.1989.38915
Abstract
A high-power Ka-band power GaAs MMIC (monolithic microwave integrated circuit) has been developed using the distributed-element impedance transforming technique. The MMIC has an on-chip matching circuit comprising a power divider and combiner. At 30 GHz, an output power of 2 W with a 3.3-dB gain and a saturation output power of 3 W have been obtained from a 9.6-mm-gate-width power GaAs FET MMIC.<>Keywords
This publication has 2 references indexed in Scilit:
- Ka-band 1 watt power GaAs MMICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High-efficiency 35-GHz GaAs MESFET'sIEEE Transactions on Electron Devices, 1987