Ka-band 1 watt power GaAs MMICs
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
High-power and high-gain Ka-band GaAs monolithic microwave integrated circuits (MMICs) were developed using a Be coimplantation technique. At 29.5 GHz, an output power of 1 W with 4.2 dB gain was obtained for a 4.8-mm width MMIC. An intercept point of +42 dBm has been obtained from the third-order intermodulation distortion measurement.Keywords
This publication has 3 references indexed in Scilit:
- A Ka-Band GaAs Power MMICPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- K/sub a/-Band Monolithic GaAs Power FET AmplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- A Packaged 20-GHz 1-W GaAs MESFET with a Novel Via-Hole Plated Heat Sink StructureIEEE Transactions on Microwave Theory and Techniques, 1984