K/sub a/-Band Monolithic GaAs Power FET Amplifiers
- 1 January 1987
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1 (0149645X) , 89-92
- https://doi.org/10.1109/mwsym.1987.1132332
Abstract
GaAs power MMIC amplifiers with an optimized FET structure operating at K/sub a/-band have achieved a small-signal gain of 4.3 dB and an output power of 481 mW. These 1.7 x 0.9-mm MMICs include DC-blocking capacitors and bias networks. A cascaded four-stage amplifier has achieved a power gain of 18.9 dB and output power of 437 mW at 28 GHz. These results may represent the highest power/gain yet demonstrated from cascaded stages of MMICs with on-chip bias and DC blocking at K/sub a/-band.Keywords
This publication has 3 references indexed in Scilit:
- A Ka-Band GaAs Power MMICPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Millimeter-Wave Monolithic GaAs Power FET AmplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- 28 GHz-Band GaAs Monolithic AmplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984