Abstract
The anisotropic growth morphology of obliquely evaporated amorphous GeSe3 thin films has been studied by small-angle neutron scattering. Films deposited at 80° to the normal contain ellipsoidal voids 240 Å in length and 120 Å in diameter inclined at 70° to the normal, and which account for 47% of the volume. Absorption of band-gap light reduces the level and anisotropy of the scattering. The ellipsoidal voids collapse to form smaller spherical voids distributed isotropically.