A new model of switching operation in fully depleted ultrathin-film CMOS/SIMOX
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (12) , 655-657
- https://doi.org/10.1109/55.116945
Abstract
An analysis is made of the switching performances of fabricated ultrathin-film submicrometer-gate CMOS/SIMOX ring oscillators. A time-dependent gate capacitance model is proposed to explain the switching operation mechanism. It is found that reducing the gate capacitance by full depletion of the body silicon dramatically improves the propagation delay time of CMOS/SIMOX.Keywords
This publication has 4 references indexed in Scilit:
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