Selective meltback etching of GaN layers in liquid-phase electroepitaxial technique
- 2 March 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 173 (1-2) , 1-4
- https://doi.org/10.1016/s0022-0248(96)00835-4
Abstract
No abstract availableKeywords
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